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FDB120N10 N-Channel PowerTrench(R) MOSFET
June 2009
FDB120N10
N-Channel
Features
* RDS(on) = 9.7m ( Typ.)@ VGS = 10V, ID = 74A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant
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PowerTrench(R)
MOSFET
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
100V, 74A, 12m
Application
* DC to DC Converters / Synchronous Rectification
D
D
G
D2-PAK
G S
FDB Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 100 20 74 52 296 198 5.8 170 1.14 -55 to +175 300 Units V V A A mJ V/ns W W/oC
oC oC
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.88 62.5 Units
oC/W
(c)2009 Fairchild Semiconductor Corporation FDB120N10 Rev. A
1
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FDB120N10 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information
Device Marking FDB120N10 Device FDB120N10 Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to 25oC VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V,TC = 150oC VGS = 20V, VDS = 0V 100 0.1 1 500 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 74A VDS = 10V, ID = 74A
(Note 4)
2.5 -
9.7 105
4.5 12 -
V m S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 80V ID = 74A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
4215 405 170 66 26 20
5605 540 255 86 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 50V, ID = 74A VGS = 10V, RGEN = 4.7
(Note 4, 5)
-
27 105 39 15
64 220 88 40
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 74A VGS = 0V, ISD = 74A dIF/dt = 100A/s
(Note 4)
-
44 67
74 296 1.3 -
A A V ns nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.11mH, IAS = 60A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 74A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDB120N10 Rev. A
2
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FDB120N10 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
3000 1000
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V
Figure 2. Transfer Characteristics
500
ID, Drain Current[A]
100
ID, Drain Current[A]
100
175 C
o
-55 C
o
10
10
25 C
o
1 0.2 0.1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
1
10
*Notes: 1. VDS = 10V 2. 250s Pulse Test
1 VDS, Drain-Source Voltage[V]
3
4
5 6 7 8 VGS, Gate-Source Voltage[V]
9
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.04
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
500
RDS(ON) [], Drain-Source On-Resistance
0.03
IS, Reverse Drain Current [A]
100
0.02
VGS = 10V
175 C
o
25 C
o
10
0.01
VGS = 20V
0.00 0 50
*Note: TC = 25 C
o
*Notes: 1. VGS = 0V
100 150 200 ID, Drain Current [A]
250
300
1 0.2
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
7000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 25V VDS = 50V VDS = 80V
5600 Capacitances [pF]
8
Ciss
4200
*Note: 1. VGS = 0V 2. f = 1MHz
6
2800
Coss
4
1400
Crss
2
*Note: ID =74A
0 0.1
0
1 10 VDS, Drain-Source Voltage [V]
30
0
20 40 60 Qg, Total Gate Charge [nC]
80
FDB120N10 Rev. A
3
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FDB120N10 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.15
Figure 8. On-Resistance Variation vs. Temperature
2.8 RDS(on), [Normalized] Drain-Source On-Resistance 2.4 2.0 1.6 1.2 0.8 0.4 -100
*Notes: 1. VGS = 10V 2. ID = 74A
BVDSS, [Normalized] Drain-Source Breakdown Voltage
1.10
1.05
1.00
0.95
*Notes: 1. VGS = 0V 2. ID = 1mA
0.90 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
1000
20s
Figure 10. Maximum Drain Current vs. Case Temperature
75
ID, Drain Current [A]
100
10
Operation in This Area is Limited by R DS(on)
10ms DC
ID, Drain Current [A]
100s 1ms
50
1
*Notes:
25
0.1
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
o
0.01 0.1
1 10 VDS, Drain-Source Voltage [V]
100 200
0 25
50 75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
1
Thermal Response [ZJC]
0.5
0.2
0.1
0.1 0.05 0.02 0.01
PDM t1 t2
*Notes: 1. ZJC(t) = 0.88 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
0.01
Single pulse
0.005 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FDB120N10 Rev. A
4
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FDB120N10 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB120N10 Rev. A
5
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FDB120N10 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT V
+
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I
SD
(DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lta g e D r o p
FDB120N10 Rev. A
6
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FDB120N10 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
FDB120N10 Rev. A
7
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FDB120N10 N-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench(R) Auto-SPMTM F-PFSTM The Power Franchise(R) Build it NowTM PowerXSTM FRFET(R) (R) SM CorePLUSTM Global Power Resource Programmable Active DroopTM (R) Green FPSTM CorePOWERTM QFET TinyBoostTM QSTM Green FPSTM e-SeriesTM CROSSVOLTTM TinyBuckTM Quiet SeriesTM GmaxTM CTLTM TinyLogic(R) RapidConfigureTM GTOTM Current Transfer LogicTM (R) TINYOPTOTM IntelliMAXTM EcoSPARK TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM (R) TRUECURRENTTM* SPM MicroPakTM (R) SerDesTM STEALTHTM MillerDriveTM (R) Fairchild SuperFETTM MotionMaxTM (R) Fairchild Semiconductor Motion-SPMTM SuperSOTTM-3 FACT Quiet SeriesTM UHC(R) OPTOLOGIC(R) SuperSOTTM-6 (R) (R) FACT OPTOPLANAR Ultra FRFETTM SuperSOTTM-8 (R) FAST(R) UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM
tm
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDB120N10 Rev. A
8
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